Mr. Richard Perron reports

5N+ PATENTS UNIQUELY POSITIONED TO EXPEDITE FIRST-TO-MARKET COMMERCIALIZATION OF VERTICAL GAN-ON-SI POWER DEVICES

5N Plus Inc. has officially launched the commercialization rights for its portfolio of gallium nitride on silicon (GaN on Si) patents that will take semiconductors and power switching technology to the next level. These key patents can enable the rapid prototype development and first-to-market commercialization of novel vertical GaN on Si power devices by companies operating in the high-power electronics (HPE), electric vehicle (EV) and artificial intelligence (AI) server sectors.

Key patents enabling first-to-market vertical GaN on Si devices

A mechanically stable, wide-band-gap semiconductor material with high heat capacity and thermal conductivity, GaN has outstanding properties. Today, lateral GaN is primarily used in low-voltage (less than 400 volts) applications, such as chargers, but novel vertical GaN on Si has the potential to replace silicon carbide (SiC), which is the current preferred material for medium-voltage and high-voltage applications (such as EV inverters operating 650 volts). SiC is expensive and not easily available, whereas GaN on Si is more efficient and cost-effective. Recent academic demonstrations utilizing key 5N Plus patents have shown that vertical GaN on Si, as opposed to lateral GaN transistors showing destructive breakdown, offers soft breakdown with avalanche capability for safe, compact and more efficient devices.

"Our 54 patents have now been shown to be more high performing and efficient than the current alternative through recent academic demonstrations. As such, our portfolio of patents is uniquely positioned to enable industry-leading HPE and EV companies to rapidly develop and commercialize first-to-market vertical GaN on Si power devices that will revolutionize high-voltage semiconductor applications," said Gervais Jacques, president and chief executive officer of 5N Plus.

5N Plus GaN on Si patent portfolio

The commercial rights of the 54 granted patents owned by 5N Plus include mandatory use of large-diameter, thick silicon substrates (over one-millimetre), combined with masking layers to filter the dislocations. Increasing the thickness of large-diameter silicon substrates in vertical GaN on Si devices enables increased voltage capacity without increasing the chip size. Also included in this patent is the ability to remove the substrate to form the backside contacts once the GaN growth is complete. In addition, the company holds lateral GaN on Si patents for radio frequency (RF) applications that will enable next-generation 5G and 6G wireless communication components. 5N Plus holds these patents through its wholly owned subsidiary, Azur Space Solar Power GmbH, a leader in multijunction solar cell technology.

About 5N Plus Inc.

5N Plus is a leading global producer of specialty semiconductors and performance materials. The company's ultrapure materials often form the core element of its customers' products. These customers rely on 5N Plus's products to enable performance and sustainability in their own products. 5N Plus deploys a range of proprietary and proven technologies to develop and manufacture its products. The company's products enable various applications in several key industries, including renewable energy, security, space, pharmaceutical, medical imaging and industrial. Headquartered in Montreal, Que., 5N Plus operates R&D (research and development), manufacturing, and commercial centres in strategically located facilities around the world, including Europe, North America and Asia.

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