These Industry Leaders are Partnering to Jointly Develop Technology
for Wireless Power, RF, and Communications and Computing Infrastructure
Company Website:
http://www.IDT.com
SAN JOSE, Calif. -- (Business Wire)
Integrated Device Technology, Inc. (IDT®)
(NASDAQ: IDTI) today announced its collaboration with Efficient Power
Conversion (EPC)
to develop technology based on Gallium nitride (GaN), a semiconductor
material widely recognized for its speed and efficiency. Under their
collaboration, the companies will explore integrating EPC’s eGaN®
technology with leading IDT solutions.
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“GaN offers exciting opportunities to develop higher-performance,
differentiated products for our customers,” said Sailesh Chittipeddi,
vice president, Global Operations and chief technology officer at IDT.
“EPC’s leadership in GaN-based power management technology made them the
obvious choice to team with, and I look forward to exploring how
GaN-based products—with all their inherent benefits—may be brought to
market in the not-so-distant future.”
The three areas in which the companies are collaborating:
- Communications and computing infrastructure—GaN’s low
capacitance and zero QRR coupled with the low inductance of
its chip-scale package result in high efficiency at high frequency.
This increase in efficiency will combine with IDT’s precise
commutation and system expertise to drive up power density and deliver
significant competitive advantage to communications and computing
infrastructures.
- Wireless power – The highly resonant wireless power transfer
standard of the Alliance for Wireless Power (A4WP) consortium protocol
operates at 6.78 MHz, where the high speed, low-loss switching ability
of GaN drives efficiency to the levels of wired solutions. Combining
the GaN expertise of EPC and precision solutions of IDT will deliver a
highly efficient, cost competitive solution that will drive widespread
adoption of wireless power.
- Radio frequency (RF) – The two companies will explore
collaboration to create a portfolio of RF products for the
communications infrastructure market.
“A growing number of innovative companies, such as IDT, are integrating
proven GaN technology into their solutions as a way to move beyond the
limitations of silicon,” said Alex Lidow, CEO and co-founder of EPC.
“Our team looks forward to working alongside IDT engineers to bring the
exceptional speed and efficiency of EPC’s GaN technology to IDT
customers.”
About
IDT
Integrated Device Technology, Inc. develops system-level solutions that
optimize its customers’ applications. IDT uses its market leadership in
timing, serial switching and interfaces, and adds analog and system
expertise to provide complete application-optimized, mixed-signal
solutions for the communications, computing and consumer segments.
Headquartered in San Jose, Calif., IDT has design, manufacturing, sales
facilities and distribution partners throughout the world. IDT stock is
traded on the NASDAQ Global Select Stock Market® under the symbol
“IDTI.” Additional information about IDT is accessible at www.IDT.com.
Follow IDT on Facebook,
LinkedIn,
Twitter,
YouTube
and Google+.
About EPC
EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
converters, wireless
power transfer, envelope
tracking, RF transmission, power
inverters, remote
sensing technology (LiDAR), and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs. Additional information about EPC is
accessible at www.epc-co.com.
Follow EPC on Facebook,
Twitter,
YouTube,
and Google+
IDT and the IDT logo are trademarks or registered trademarks of
Integrated Device Technology, Inc. eGaN is a registered trademark of
Efficient Power Conversion Corporation, Inc. All other brands, product
names and marks are or may be trademarks or registered trademarks used
to identify products or services of their respective owners.
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Contacts:
Integrated Device Technology
Dean Solov, 408-284-2608
Public
Relations Manager
dean.solov@idt.com
Source: Integrated Device Technology, Inc.
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