The New RF Voltage Variable Attenuators Extend IDT’s Frequency Range
Coverage with Low-Insertion Loss, High Linearity Devices Supporting 1
MHz to 6 GHz
Company Website:
http://www.IDT.com
SAN JOSE, Calif. -- (Business Wire)
Integrated Device Technology, Inc. (IDT®)
(NASDAQ: IDTI) today introduced two new members to its growing family of
RF voltage variable attenuators (VVA), expanding IDT’s frequency
coverage to a range of 1 MHz to 6 GHz. Like the other members of the
family, the F2255
and F2258
devices offer industry-leading low insertion loss and high linearity.
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IDT’s VVAs deliver analog control for applications that require precise
attenuation. Both new devices come in a compact 3 millimeter by 3
millimeter, 16-pin TQFN package. They offer about half the insertion
loss of competitive solutions, IP3 performance 1000x (30 dB) better than
the competing Gallium arsenide (GaAs) device, and they exhibit a
linear-in-dB attenuation characteristic across the voltage control
range. Their low insertion loss reduces RF chain path loss, while their
high linearity improves system data rates.
These newest devices match popular footprints and are ideal for base
stations (2G, 3G and 4G), microwave infrastructure, public safety,
portable wireless communication/data equipment, test/ATE equipment,
military systems, JTRS radios, and HF, VHF and UHF radios.
“IDT’s silicon-based RF products deliver exceptional performance
compared to GaAs solutions, in this case up to a 30dB linearity
improvement,” said Chris Stephens, general manager of IDT’s RF division.
“These devices are the lowest insertion loss VVAs on the market, and
have the most linear attenuation control characteristic.”
By using silicon-based RF semiconductor technology, IDT’s attenuators
offer a robust alternative to older GaAs-based semiconductor technology.
Silicon technology offers the advantages of improved RF performance as
well as more robust electrostatic discharge (ESD) protections, better
moisture sensitivity levels (MSL), improved thermal performance, lower
current consumption, and the proven reliability of silicon technology.
Comparing the F2258 to its pin-compatible GaAs competitor, the device
has an Input IP3 of up to 65dBm vs 35dBm, a maximum attenuation slope of
33dB/Volt vs. 53dB/Volt; minimum return loss up to 6000MHz, 12.5dB vs.
7dB; and operating maximum temperature range of 105C Vs 85C. The F2255
device supports a frequency range down to 1MHz and has a maximum
attenuation slope of 33dB/Volt. Both devices have bi-directional RF
ports, support a single positive supply voltage of either 3V or 5V and
have an operating temperature range of -40 to 105C.
About
IDT RF Products
IDT offers high-performance and full-featured radio frequency (RF) mixer
and gain control products that deliver exceptional performance in
compact packages. The RF signal path products include low-power,
low-distortion RF to intermediate frequency (IF) mixers, low-noise
high-performance intermediate frequency (IF) variable gain amplifiers
(VGA), low-noise high-performance digital step attenuators (DSA), and
high-performance low-insertion loss RF switches. These devices are ideal
for products such as cellular 4G base stations, broadband repeaters,
distributed antenna systems and microwave backhaul equipment.
About
IDT
Integrated Device Technology, Inc. develops system-level solutions that
optimize its customers’ applications. IDT uses its market leadership in
timing, serial switching and interfaces, and adds analog and system
expertise to provide complete application-optimized, mixed-signal
solutions for the communications, computing and consumer segments.
Headquartered in San Jose, Calif., IDT has design, manufacturing, sales
facilities and distribution partners throughout the world. IDT stock is
traded on the NASDAQ Global Select Stock Market® under the symbol
“IDTI.” Additional information about IDT is accessible at www.IDT.com.
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IDT and the IDT logo are trademarks or registered trademarks
of Integrated Device Technology, Inc. All other brands, product names
and marks are or may be trademarks or registered trademarks used to
identify products or services of their respective owners.
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Contacts:
IDT
Dean Solov, 408-284-2608
Public Relations Manager
dean.solov@idt.com
Source: Integrated Device Technology, Inc.
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